Fraunhofer HHI & IAF
The Fraunhofer Gesellschaft (https://www.fraunhofer.de/) is Europe’s largest application-oriented research organization. It currently maintains 67 research institutes at locations throughout Germany. The participating institutes in TERRANOVA are the Fraunhofer Heinrich Hertz Institute (HHI) with its department Photonic Networks & Systems and the Fraunhofer Institute for Applied Solid State Physics (IAF) with its business unit Millimeter-Wave & THz Circuits.
The FHG-HHI (https://www.hhi.fraunhofer.de/) focusses on innovations for the digital society of the future. In this area, the FHG-HHI is a world leader in the development for mobile and optical communication networks and systems as well as processing and coding of video signals. Together with international partners from research and industry, FHG-HHI works in the whole spectrum of digital infrastructure – from fundamental research to the development of prototypes and solutions. The institute participates in the standardization of information and communication technologies and creates new applications together with industrial partners. Currently, FHG-HHI staff includes about 270 employees and approx. 140 students as R&D assistants.
The core competencies of the FHG-IAF (https://www.iaf.fraunhofer.de/) comprise the whole value chain of III/V compound semiconductor technologies. These are materials research, process development, circuit design and manufacture, module integration and subsystem assembly. Some key product examples are millimeter-wave/THz circuits for communication and sensor systems, robust gallium nitride based voltage converters for the efficient use of renewable energy, infrared lasers for the detection of explosives, thermal imaging cameras with high thermal resolution, and microsystems for gas and fluidic analysis. In 2014 the institute had a total staff of 290 including 210 scientists and engineers with an annual budget of 28 million Euros. The total floor space for offices and laboratories is 8000 m2, with a clean room of 800 m2 for device and circuit processing and epitaxy.